IRG4PC40KDPBF - IGBT Single Transistor, 42 A, 2.1 V, 160 W, 600 V, TO-247AC, 3 Pins
Descrição geral do produto
The IRG4PC40KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies >5kHz and short-circuit rated to 10µs at 125°C, VGE = 15V. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Informação do produto
DC Collector Current:
42A
Collector Emitter Saturation Voltage Vce(on):
2.1V
Power Dissipation Pd:
160W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247AC
No. of Pins:
3Pins
Operating Temperature Max:
150°C