IRF530N - Mosfet N, 100V, 17A, 79W, 0.09R, TO220

IRF530N - Mosfet N, 100V, 17A, 79W, 0.09R, TO220

Descrição geral do produto

The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, these power MOSFETs are known to provide extreme efficiency and reliability which can be used in a wide variety of applications.

Drain to source voltage Vds is 100V
Gate to source voltage is ±20V
On resistance Rds(on) of 90mohm at Vgs of 10V
Power dissipation Pd of 70W at 25°C
Continuous drain current Id of 17A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C

Aplicações

Power Management, Industrial, Portable Devices, Consumer Electronics

Informação do produto

Transistor Polarity: N Channel
Continuous Drain Current Id: 17A
Drain Source Voltage Vds: 100V
On Resistance Rds(on): 0.09ohm
Rds(on) Test Voltage Vgs: 10V
Threshold Voltage Vgs: 4V
Power Dissipation Pd: 63W
Transistor Case Style: TO-220AB
No. of Pins: 3Pins
Operating Temperature Max: 175°C
Product Range: -
Automotive Qualification Standard: -
MSL: -