HGTG20N60B3 - IGBT, N-CH, 600V, 40A, 165W, TO2247

HGTG20N60B3 - IGBT, N-CH, 600V, 40A, 165W, TO2247

Descrição geral do produto

The HGTG20N60B3 is a N-channel IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as drivers for solenoids, relays and contactors. The generation III UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately between 25 and 150°C.

Short-circuit rating
140ns at 150°C Typical fall time
165W Total power dissipation @ TC = 25°C

Aplicações

Power Management, Motor Drive & Control

Informação do produto

DC Collector Current: 40A
Collector Emitter Saturation Voltage Vce(on): 2V
Power Dissipation Pd: 165W
Collector Emitter Voltage V(br)ceo: 600V
Transistor Case Style: TO-247
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: -
Automotive Qualification Standard: -
MSL: -