BU2525DF - Transistor NPN 1500V 12A 125W + Diodo

BU2525DF

Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 45
Maximum collector-base voltage |Ucb|, V: 800
Maximum collector-emitter voltage |Uce|, V: 800
Maximum emitter-base voltage |Ueb|, V: 13.5
Maximum collector current |Ic max|, A: 12
Maksimalna temperatura (Tj), °C: 150
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF: 145
Forward current transfer ratio (hFE), min: 11

nchange Semiconductor Product Specification Silicon NPN Power Transistors BU2525DF DESCRIPTION ?¤ With TO-3PFa package ?¤ High voltage ?¤ High speed switching ?¤ Built-in damper diode APPLICATIONS ?¤ For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25?? ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak SEM GE Open emitter Open base CONDITIONS OND IC TOR UC VALUE 1500 800 7.5 12 30 8 12 UNIT V V A A A A A W ?? ?? Open collector Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25?? 45 150 -65~150