SI4100DY-T1-GE3 - Mosfet, N, 100V, 6.8A, 0.051mOhm, 6W, SOI8

SI4100DY-T1-GE3 - Mosfet, N, 100V, 6.8A, 0.051mOhm, 6W, SOI8


Descrição geral do produto
The SI4100DY-T1-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for high frequency boost converter and LED backlight for LCD TV applications.

100% UIS tested
Halogen-free
-55 to 150°C Operating temperature range

Aplicações

Industrial, Power Management, LED Lighting
Avisos
Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
Informação do produto

Transistor Polarity: N Channel
Continuous Drain Current Id: 6.8A
Drain Source Voltage Vds: 100V
On Resistance Rds(on): 0.051ohm
Rds(on) Test Voltage Vgs: 10V
Threshold Voltage Vgs: 2V
Power Dissipation Pd: 6W
Transistor Case Style: SOIC
No. of Pins: 8Pins
Operating Temperature Max: 150°C
Product Range: -
Automotive Qualification Standard: -
RoHS Phthalates Compliant: Yes
MSL: MSL 1 - Unlimited