IXTK120N65X2 - Mosfet N, 650V, 120A, 1250W, 0.024R, TO264
Type Designator: IXTK120N65X2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1250 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 9920 pF
Maximum Drain-Source On-State Resistance (Rds): 0.024 Ohm
Package: TO-264P