STB14NM50N - MOSFET, N, 500V, 12A, 90W, 0.28R, TO263

STB14NM50N - MOSFET, N, 500V, 12A, 90W, 0.28R, TO263

Descrição geral do produto
The STB14NM50N is a MDmesh™ II N-channel Power MOSFET developed using the second generation of MDmesh™ technology. The device associates a vertical structure with strip layout yield to lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistance

Informação do produto
Transistor Polarity:
N Channel
Continuous Drain Current Id:
12A
Drain Source Voltage Vds:
500V
On Resistance Rds(on):
0.28ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
90W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited