Marking Code: B100NF04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 120 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 110 nC
Rise Time (tr): 220 nS
Drain-Source Capacitance (Cd): 1300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0046 Ohm
Package: D2PAK
Ficha informativa
- Tipo
- MOSFET
- RDS
- 0.0046Ohm
- Canal
- N-CH
- Tensão
- 40V
- Corrente
- 120A
- Potência
- 300W
- Caixa
- TO252
- Montagem
- SMD