FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 108mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 50V
FET Feature -
Power Dissipation (Max) 2.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Ficha informativa
- Tipo
- MOSFET
- RDS
- 0.108Ohm
- Canal
- N-CH
- Tensão
- 100V
- Corrente
- 3.2A
- Potência
- 2.2W
- Caixa
- SOT223
- Montagem
- SMD