FP75R12KT4BOSA1 - Modulo IGBT, 75A, 385W
Informação do produto
IGBT Configuration:
PIM Three Phase Input Rectifier
Transistor Polarity:
N Channel
DC Collector Current:
75A
Continuous Collector Current:
75A
Collector Emitter Saturation Voltage:
1.85V
Collector Emitter Saturation Voltage Vce(on):
1.85V
Power Dissipation Pd:
385W
Power Dissipation:
385W
Collector Emitter Voltage V(br)ceo:
1.2kV
Junction Temperature Tj Max:
150°C
Operating Temperature Max:
150°C
Transistor Case Style:
Module
IGBT Termination:
Press Fit
Collector Emitter Voltage Max:
1.2kV
IGBT Technology:
IGBT 4 [Trench/Field Stop]
Transistor Mounting:
Panel
Product Range:
EconoPIM 3